A new paper claims that directed self-assembly could be key to patterning lines below 10nm, but line-edge roughness and manufacturing challenges still present substantial barriers.
The post New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV appeared first on ExtremeTech.
sourse ExtremeTechExtremeTech http://ift.tt/2nHKJr1
ليست هناك تعليقات:
إرسال تعليق