الثلاثاء، 28 مارس 2017

New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV

Intel Foundry

A new paper claims that directed self-assembly could be key to patterning lines below 10nm, but line-edge roughness and manufacturing challenges still present substantial barriers.

The post New advances in directed self-assembly could push silicon below 10nm more efficiently than EUV appeared first on ExtremeTech.



sourse ExtremeTechExtremeTech http://ift.tt/2nHKJr1

ليست هناك تعليقات:

إرسال تعليق